Whereas there are now a large number of well-established methods for preparing II-VI semiconductor nanomaterials, efficient syntheses of highly crystalline, monodispersed colloidal III-V semiconductor nanomaterials remain scarce[1]. Here, wurtzite indium nitride (InN) nanocrystals have been synthesized with narrow size distribution and good crystallinity via a solution route using commercially available, inexpensive and easy to handle precursors. Quantum confinement in these InN nanocrystals is demonstrated and quantitatively correlated to the size of the nanoparticles. Indium nitride is chemically inert and it has been established that wurtzite phase has a direct band gap which lies around 0.65 - 0.7 eV[2,3]. The band gap of the synthesized material has been observed to be as high as 1.0 eV under confinement which is ideal for solar cell applications[4]. The size and dispersity of the nanoparticles can be tuned by controlling the molar ratio and rate of addition of the reactants. The samples have been characterized by UV/Vis/NIR absorption and FTIR spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and energy-dispersive spectroscopy (EDS). (1) Green, M. Current Opinion in Solid State and Materials Science 2002 , 6, 355�363(2) Matsuoka, T.; Okamoto, H.; Nakao, M; Harima, H and Kurimoto, E. Appl. Phys. Lett. 2002 , 81, 1246�1248(3) Morkoc, H. Nitride Semiconductors and Devices; Springer: Heidelberg, 1999 (4) Nozik, A. J. Chem. Phys. Lett. 2008 , 457,3-11

Synthesis and properties of size tunable indium nitride nanoparticles

246th National Meeting (2013)

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