With the miniaturization process of electrical components, the investigation of unimolecular electronic devices is of great importance. In order to address this phenomenon a new asymmetric ligand with an N2O3 binding moiety and its low symmetry pentacoordinate iron(III) and manganese(III) complexes were synthesized and structurally characterized. The film formation ability of these precursors was examined using the Langmuir-Blodgett technique and observed high collapse pressures of = 50 mN/m. After characterizing the LB films with UV-visible and infrared reflection absorption spectroscopic (IRRAS) methods the film quality and its morphology were analyzed by AFM analysis. The monolayer films showed a roughness of ~ 0.2 nm and thickness of 1.9�0.2 nm. The metal/LB mono layer/metal devices of the two complexes showed asymmetric current-voltage characteristics in a range of applied potentials. This feature demonstrates the rectifying behavior of the nano-scale devices of iron(III) and manganese(III) complexes which were fabricated using the LB monolayers.

Isolation of pentacoordinate iron(III) and manganese(III) complexes for nano-scale devices

246th National Meeting (2013)

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