Ternary quasi-one-dimensional semiconductor nanostructures like CdSxSe1-x are of ever increasing interest because of their physical properties and their potential to play a major role in the fabrication of optoelectronic and nanodevices of the future. Composition, morphology and overall homogeneity along individual nanostructures are controlled by small changes of parameters during growth. Inhomogeneities along the wire that influence the electronic structure are important for charge carrier transport as they can result in trapping of charge carriers. Ultrafast luminescence dynamics is a sensitive probe for electronic structure of semiconductors. The wide field kerr-gated fluorescence microscope 1can facilitate the spatial, temporal and spectral resolution of the femtosecond luminescence dynamics of an individual nanowire and its defect sites. We compare luminescence dynamics localized on differenct spots along an individual nanowire to variations introduced during growth. 1. Gundlach L., Piotrowiak P., Ultrafast Spatially Resolved Carrier Dynamics in Single CdSSe Nanobelts, J. Phys. Chem. C 2009  , 113, 12162-12166.

Ultrafast carrier dynamics in defect sites of individual CdS<sub>x</sub>Se<sub>1-x</sub> nanobelts by femtosecond Kerr-gated microscopy

246th National Meeting (2013)

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Ultrafast carrier dynamics in defect sites of individual CdSxSe1-x nanobelts by femtosecond Kerr-gated microscopy

Ultrafast carrier dynamics in defect sites of individual CdS_xSe_1-x nanobelts by femtosecond Kerr-gated microscopy