Spin coated thin film field effect transistors were fabricated from the n-doped semiconductor poly[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyll-alt-5,5�-(2,2'-bithiophene)] [P(ND12OD-T2]n with charge mobility of 3.0x10-3 cm2/V-s. UV irradiation however leads to an increase in the channel current with concomitant increase in the charge mobility and on/off ratio. There is also a shift of the threshold voltage in the negative direction with an induced change in charge concentration of 3.0x1012 cm-2. The device was also tested as a UV light sensor and had a response time of ~20s making it multifunctional. Desorption of electron trapping species and photo-excitation are suggested as possible mechanisms. These results show that one can improve the device parameters via UV irradiation without cumbersome chemical purification techniques.

Effect of ultraviolet irradiation on an n-doped semiconductor thin film transistor

246th National Meeting (2013)

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