Nanostructure active regions for light emitting diodes (LEDs) in the InGaN/GaN materials system are described that have the potential to overcome the present limitations of semiconductor LEDs - efficiency droop at high current density and the lack of efficient monochromatic emission across the visible spectrum. Uniform arrays of vertically oriented GaN nanorods and nanosheets synthesized by selective area metalorganic chemical vapor deposition on c-plane GaN/sapphire substrates under a variety of growth conditions serve as templates on which to grow InGaN/GaN quantum well (QW) active regions. The use of nonpolar facets on the nanostructure templates eliminates piezoelectric fields that distort the band structure compared to QWs on the c-plane. The nonplanarity of the active regions expands the active area on a chip to reduce the current density. The resultant nanostructure materials have been fashioned into LEDs and characterized for their light output and spectral properties. This talk will emphasize the properties of the materials and devices fabricated in this way with particular emphasis on controlling the kinetics of template growth to create structures with the appropriate facets to support uniform QW properties and controlled emission wavelengths.

InGaN/GaN nanostructure light emitting diodes for efficient solid state lighting

246th National Meeting (2013)

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