We have developed a new method for synthesizing and manipulating colloidal indium nitride (InN) nanocrystals (NCs), an intriguing material with potential applications in optoelectronic technologies such as next-generation photovoltaics owing to its small band gap of ~0.7 eV.  However, like all but the most ultrapure thin film InN, as-prepared samples contain a large excess of free electrons, which moves the Fermi level above the conduction band energy such that optical transitions occur at energies well in excess of the band gap (the so-called Burstein-Moss effect).  Methods must be found to reduce the free carrier density for this material to be useful in optoelectronic technologies.  We will present the synthesis of 4-10 nm diameter InN NCs and methods to control the photophysical properties of this unique material.

Synthesis and photophysical manipulation of colloidal indium nitride nanocrystals

246th National Meeting (2013)

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