The growth of GaN from co-dosing of NH3 and Ga(C2H5)3 (triethyl gallium, TEG) on a single crystal surface of zirconium diboride, ZrB2(0001), was studied under ultrahigh vacuum conditions with the technique of X-ray photoelectron spectroscopy. These studies were motivated by the use of ammonia and TEG for growth of GaN by metal organic chemical vapor deposition. One important application of GaN is for ultraviolet light emitting diodes. However, performance of the devices is limited by the large mismatch of lattice constants and thermal expansion coefficients between the nitride heteroepitaxial layers and the usually used substrates, sapphire, SiC and Si. Recently zirconium diboride (ZrB2), a refractory metallic compound, has been proposed as a promising substrate for GaN growth because of their similar lattice constants and thermal expansion properties. Our results showed that growth at 200 �C, resulted in a Ga to N ratio higher than 4:1. Upon increasing the growth temperature to ~ 300 �C, stoichiometric GaN grew on the ZrB2surface. The GaN film properties as a function of growth temperature, such as stoichiometry, purity, and chemical state, were determined from the XPS data.Work supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Contract No. DE-AC02-06CH11357.

GaN growth from NH3 and Ga(C2H5)3 on the ZrB2(0001) surface under ultrahigh vacuum

246th National Meeting (2013)

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