The behavior of transition metal complexes has been demonstrated as proof-of-concept for molecular wires, transistors and logic gates. Similarly, the use of homogeneous Langmuir-Blodgett (LB) films is relevant for the miniaturization process of unimolecular electronic devices.   In this talk, we will present the synthesis, characterization, LB film behavior and use in device fabrication of three new classes of metallosurfactants, namely (i) square planar copper(II) complexes with aminomethylpyridine ligands, (ii) trigonal bypiramidal iron(III) and manganese(III) complexes with an asymmetric [N2O3] phenolate-richligand, and (iii) octahedral ruthenium(II) complexes with [N3O2] terpy/catecholoid ligands. The correlations between current/voltage characteristics of these species and the role of the metal, ligands, and overall geometry of the complex will be discussed.Funding NSF

Comparison on the rectifying behavior of LB-films of metallosurfactants in nanodevices

246th National Meeting (2013)

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