As a function of molecule is peculiar to applicable, the p conjugated structure molecular devices attract much attention as nanoscale devices in recent years. In order to realize a molecule device, it is necessary to establish the fabrication processes of solid state molecular devices. In this study, a filler molecule (1) which has multi-electronic oxidation-reduction activity was introduced into the gold nanogap electrode from its solution. The filler molecule (1) was introduced between Gold nanogap electrodes with a 1~3 nm gap separation were prepared by EB lithography and a surface catalyzed electroless gold plating method. The current-voltage characteristic was measured performed at 9 K and room temperature under a vacuum. Tunneling current showed several constant states under a constant bias voltage at 9 K (fig.1a). Conductance states shows five values, by the Gaussian fitting of the histogram, and they are 203 nG0, 215 nG0, 224 nG0, 241 nG0, and 250 nG0, respectively (fig.1b). Here, G0 is 77 �S. These multi-stage switching effect are attributes to multi states of one filler molecule (1) oxidation-reduction. Therefore, this filler molecule (1) is a candidate of a component of multi-stage memory.

Multistate switching of redox active unimolecular device based on electroless plated gold nanogap electrodes

247th National Meeting (2014)

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