Ambipolar organic semiconductors, who allow both electron and hole to transport within their OFET devices, have attracted much attention in recent years. The majority of the available organic semiconductors are unipolar, ie.they exhibit only hole-transport (p-type) or electron-transport (n-type) property. Much fewer organic semiconductors have been found to exhibit ambipolar characteristics. Recently, there has been an increasing interest in ambipolar materials partly due to their potential applications in complementary like inverter and organic light-emitting transistors. However, among the reported ambipolar organic semiconductors, few of them showed high and balanced hole and electron mobilities.We have been exploring the strategy of designing high performance ambipolar organic semiconductors based on azapentacene framework. Herein, we report the fabrication of simply structured and high performance organic complementary inverters based on two series of ambipolar organic semiconductors. Individual transistors using symmetric Au electrodes showed high and balanced performance, with good hole (up to 0.23 cm2V-1s-1) and electron (up to 0.21 cm2V-1s-1) mobilities. Integrated complementary inverters showed sharp inversions with high gains (>180) and negligible hysteresis. The inverters using low-cost electrodes, Ag and Cu, also exhibited high gains and high noise margins (>75% of the ideal value).

Design of ambipolar organic semiconductors for high performance CMOS-like inverters

247th National Meeting (2014)

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