The growth of monolithically integrated conductive oxides on silicon could be useful in a variety of applications, especially when paired with crystalline ferroelectrics.  This research studied both the structural and electrical effects of lanthanum-doping on thin strontium titanate films grown at a thickness range of 6-25 nm on Si (001) substrates.   Atomic layer deposition was used after buffering the substrate with four unit cells of strontium titanate deposited via molecular beam epitaxy. Lanthanum-doped strontium titanate (La:STO) films were successfully grown on silicon while maintaining a single-crystal structure and achieving good conductivity, in comparison to the insulating properties of undoped strontium titanate.  When tested electrically, a 15% lanthanum-doped thin film had a resistivity of about 1.6 � 10-3 ?-cm.  Crystalline structure was analyzed both by x-ray diffraction and transmission electron microscopy.  The results indicated that higher doping concentrations (over 30%) contributed to crystalline defects.

Effects of lanthanum-doping on strontium titanate thin films grown on Si (001) substrates

247th National Meeting (2014)

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