Semiconductor nanowires have been widely studied due to their unique properties like widely adjustable surface to volume ratio and high carrier mobility. These unique properties make them a suitable candidate for various electronic devices like photovoltaics, photodiodes, photodetectors, and field effect transistors. The performance of those devices depends on the surface of nanowires, because of the high surface to volume ratio. In this work, CdS nanowires, grown via the high-temperature vapor liquid solid mechanism, are treated following growth with solution phase reagents to control the chemical state of their surfaces. These solution phase treatments are correlated with changes in electronic properties as determined from field effect transistor (FET) and photocurrent measurements.

Consequences of surface treatment on the transport properties of II-VI semiconductor nanowire devices

247th National Meeting (2014)

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