We have prepared monolayer films of molybdenum dichalcogenide alloys with composition varying continuously between MoS2 and MoSe2. The films are grown on a SiO2 surface using organic sulfur/selenium precursors and a MoO3 solid source.  The composition of the films for different growth conditions is determined directly using photoelectron spectroscopy.  All MoS2(1-x)Se2x films exhibit a direct band gap and transition energies that can be tuned continuously between 1.87 eV (pure single-layer MoS2) and 1.55 eV (pure single-layer MoSe2) through control of the S/Se ratio.I will also talk about recent efforts in post-growth S/Se exchange in these films.

Growth and post-growth modification of MoS2, MoSe2 and MoS2(1-x)Se2x alloys

247th National Meeting (2014)

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