The production of bent bands near the surface of semiconductor TiO2 strongly influences charge transfer at the interface between the semiconductor and adsorbed molecules on its surface. This lecture will review the principles of band bending and its influence on surface chemistry in controlling both O2 photodesorption and CO photooxidation processes at the surface of TiO2(110). In addition, for powdered TiO2 we will report the use of photoluminescence for observing band bending which influences the photoluminescence yield and which may be employed to monitor slow electron hopping in macroscopic depths within the TiO2. The activation energy for electron hopping has been measured to be 0.015 � 0.008 eV and the electron diffusivity has been estimated as ~ 10-10 m2V-1s-1 at 300 K.

Band bending and surface reactivity of photoexcited TiO<sub>2</sub>

248th National Meeting (2014)

The official archive and repository for all ACS Meetings & Expositions abstracts and select posters or presentations.

Band bending and surface reactivity of photoexcited TiO2

Band bending and surface reactivity of photoexcited TiO₂