There is considerable interest in the controlled p-type and n-type doping of carbon nanotubes (CNT), for use in a range of important electronics applications, including the development of hybrid CNT/silicon (Si) photovoltaic devices. Here, we demonstrate that easy to handle metallocenes and related complexes can be used to both p-type and n-type dope single walled carbon nanotube (SWNT) thin films, using a simple spin coating process. We report n-SWNT/p-Si photovoltaic devices that are >450 times more efficient than the best solar cells of this type currently reported and show that the performance of both our n-SWNT/p-Si and p-SWNT/n-Si devices is related to the doping level of the SWNT. Furthermore, we establish that the electronic structure of the metallocene or related molecule can be correlated to the doping level of the SWNT, which may provide the foundation for controlled doping of SWNT thin films in the future. Finally, we explore the effect of oxygen on the doping level of SWNT thin films and show that using a process involving HF treatment and current stimulation we can effectively remove oxygen from SWNT thin films without vacuum treatment.

Effect of oxygen and metallocenes on the doping of carbon nanotubes for application in hybrid carbon nanotube/Si solar cells

248th National Meeting (2014)

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