Lithography, the workhorse technology enabling microelectronics manufacture, has reached astonishing success in producing nanoscale features. Despite this, even higher resolution is needed if plans for next generation electronics are to be achieved. This presentation summarizes approaches to the design of photoresists that abandon the traditional polymer based strategy and explore the use of structures with molecular dimensions on the order of 5 nm and less. In this presentation phenolic molecular glass photoresists are first discussed. Built from organic small molecules, these materials have been synthesized with a variety of structures and patterned at high resolution using EUV radiation. Conventional negative tone and positive tone chemically amplified strategies have been explored and are described.In a recent development, metal oxide nanoparticles based on hafnia or zirconia with ligands of organic acids have been examined. These materials are extremely sensitive to EUV radiation (less than 10 mJ/cm2) and produce high-resolution patterns. These photoresists which incorporate photoactive compounds function via a ligand exchange mechanism that gives the materials their very high sensitivity. The preparation, imaging and properties of these materials will be discussed.Figure. Metal oxide nanoparticle resist consisting of oxide core, organic ligands and photo active compounds. These nanoparticles are patterned via a completely new, non-chemically amplified ligand exchange mechanism.

Making patterns on the length scale of molecules

248th National Meeting (2014)

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