The spinel gallate CoGa2O4 is of interest for its magnetic properties. The present work offers a model for the Chemical vapor transport growth of crystals. The closed reactor is viewed as consisting of 3-zones; hot source (TS), cold deposition (Td) and connecting-zones; the latter is under a linear temperature-gradient, w = (TS - Td)/LC, where LC is diffusion-length. Precursor material reacts with chlorine gas in the source-zone to generate a mix of 13 vapor species.         CoGa2O4(s)  +  2 Cl2  =  CoCl2  +  2 O2  +  2 GaCl  The gas species diffuse between the end-zones and reverse reaction deposits crystals at Td. The model predicts the diffusion-limited rate between the end-zones, subject to constraints ofstoichiometry; the gas/solid equilibria are assumed in the end-zones. The computed rate iscompared to experimenta work of Leccabue et al. (J. Cryst. Growth 79 : 410, 1986); and the agreement is reasonable.

Virtual equilibrium model of chemical vapor transport growth of CoGa<sub>2</sub>O<sub>4</sub>crystal in a closed reactor

248th National Meeting (2014)

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Virtual equilibrium model of chemical vapor transport growth of CoGa2O4crystal in a closed reactor

Virtual equilibrium model of chemical vapor transport growth of CoGa₂O₄crystal in a closed reactor