Integration of carbon nanomaterials into heterostructures with well-defined interfaces enables enhanced performance in electronic, optoelectronic, sensing, and energy technologies.  For example, organic self-assembled monolayers on graphene act as effective seeding layers for atomic layer deposited dielectrics, resulting in metal-oxide-graphene capacitors with exceptionally high wafer-scale reliability and uniformity. Similarly, the traditional trade-off between on/off ratio and mobility in semiconducting carbon nanotube (CNT) thin-film transistors (TFTs) is overcome by replacing conventional inorganic gate dielectrics with hybrid organic-inorganic self-assembled nanodielectrics, yielding on/off ratios approaching 106 while concurrently achieving mobilities of ~150 cm2/V-s. Finally, the integration of p-type semiconducting carbon nanotubes with n-type single-layer MoS2 allows the realization of gate-tunable p-n heterojunction diodes with unprecedented anti-ambipolar behavior when operated as a three-terminal device. Overall, this work establishes that carbon nanomaterial applications can be substantially enhanced and diversified into new areas through precise integration into heterostructure devices.

Integration of carbon nanomaterials into heterostructure devices

248th National Meeting (2014)

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