The semiconductor industry, in its ongoing efforts to make ultra-small (>20 nm) patterns, has identified specific shortcomings in current resist approaches with achieving target line edge roughness, line width roughness, and defects in resists during the lithographic process. A current challenge is providing photoresists with optimal combinations of the so-called z-parameter, the convolution of these resist performance factors. Using a unique process of physical vapor deposition, the substrate temperature can be controlled during the deposition of resist materials (as opposed to traditional room temperature solution depositions) in order to create ultra-stable films which enhance lithographic properties. In this study, a model calixarene resist system was synthesized and vapor deposited onto multiple substrates of varying temperatures. The thermal characteristics and stability of the films were explored, and patterning properties of the films were investigated using electron beam lithography. The resist proved to be stable up to 250 �C and nanometer resolution was achieved. Stability differences of films deposited onto substrates with temperatures ranging from 263 K to 303 K were identified. The most stable glasses also showed the highest resolution and lowest roughness of the corresponding lithographic patterns. Our study shows the importance of deposition techniques and conditions towards obtaining optimal resist performance.

Lithographic patterning of ultra-stable thin films of calixarene

248th National Meeting (2014)

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