The first steps in exploring the viability of a solution route to GaAs were undertaken by thermally treating thin films of GaAs single source precursors. Thin films of (tBu2AsGaEt2)2 (1), (tBu2AsGaMe2)2 (2), [tBu(H)AsGaEt2]3 (3), and (Et2AsGaEt2)n (4) were heated to 600 °C under argon and analyzed by XRD and EDS. It is shown that the novel precursor 3 afforded stoichiometric GaAs, while the other precursors afforded arsenic poor films. The conversion of 3 to GaAs was probed by evolved gas analysis, where the volatiles were analyzed by GC and MS as a function of temperature. It is shown that ethane is evolved from 50 to 120 °C. Additional evidence that 3 loses ethane is isolation of the cluster {[tBu(H)AsGaEt2]3[tBuAsGaEt]2} (5) from solutions of 3. Compound 5 is a cluster of the general formula [(R2YMR2)n(RYMR)m] (Y = Group 15; M = Group 15; R = alkyl, H, and related groups) and lies on the continuum between the two well known families (R2YMR2)n and (RYMR)m. The isolation of 5 provides structural insight into some of the clusters that are formed on the pathway to (RYMR)m.

Formation of stoichiometric GaAs from thin films of [tBu(H)AsGaEt2]3: Mechanistic studies and isolation of the novel cluster {[tBu(H)AsGaEt2]3[tBuAsGaEt]2}

249th National Meeting (2015)

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