Sb2S3 and Sb2Se3 both have optimal band gaps (1.7 eV and 1.2 eV, respectively) and absorption coefficients to make them efficient light absorbers for thin film solar devices. Low temperature solution processing of these earth abundant materials is a cost effective technique for the fabrication of next generation solar cells. Furthermore, solid solutions comprised of these two semiconductors have been shown to have band gaps that are more ideal for photovoltaic applications than those of the individual semiconductors. In the work that will be presented, a solvent mixture of mercaptoethanol and ethylenediamine is utilized to quickly dissolve bulk Sb2S3 or bulk Sb2Se3 into a solution processable ink under ambient conditions. This ink is then spin-coated onto a conducting substrate and subsequently thermalized to produce a thin film of the crystalline material, as verified by XRD and XPS. The optical band gaps of the annealed films, measured by UV-Vis absorption, are in good agreement with the literature values. TGA data shows complete loss of combustible organic components of the ink at annealing temperatures. Solid solutions of Sb2SxSe3-x are synthesized by dissolving stoichiometric amounts of the individual semiconductors into the same ink followed by heat treatment to obtain the crystalline solid solutions, which are verified by XRD.

Low-temperature solution processing of stibnite thin films

249th National Meeting (2015)

The official archive and repository for all ACS Meetings & Expositions abstracts and select posters or presentations.