The formation of sub-10 nm structures from block copolymer (BCP) self-assembly is being investigated for high-resolution patterning. For nanofabrication applications, the orientation and alignment of BCP domains that have high etch contrast are critical. Silicon-containing BCPs are capable of forming sub-10 nm features and have inherent etch resistance. Lamella-forming poly(styrene-<i>block</i>-trimethylsilylstyrene) (PS-PTMSS) was synthesized and oriented via thermal annealing between neutral surface treatments and polarity-switching top coats. A process flow for integrating orientation control with e-beam defined pre-patterns has been established. Both chemo- and grapho-epitaxy were demonstrated using chemically and topographically patterned substrates resulting in density multiplications up to 6x and trench subdivisions up to 7x, respectively. This work demonstrates the compatibility of DSA with BCPs that require top interface functionalization to control orientation.

Directed self-assembly of silicon-containing block copolymers for lithography

249th National Meeting (2015)

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