Silicon nanostructure (SNS) are important areas research due to their unique and wide scope of applications. One of the most attractive application of SNS is solar cell energy harvesting. This source of energy is not only environmental friendly but also inexhaustible. Even though silicon bulk material has an indirect band gap of 1.1 eV, which is not effective as light harvester, the SNS has a direct band gap that can be tuned with diameter, length, geometry, orientation, doping and different passivation. During the experimental preparation of Hydrogen passivated SNS some part of it oxidized to form SiO2. The resulting Si-SiO2 SNS has many experimental attractive behaviors, such as greater photoluminescence emission. Despite the existence of numerous experimental research work on the Si-SiO2 SNS, there is a lack of the fundamental understanding behind their interesting behavior. In this research, theoretical calculation have been used to shed light over the main differences between SNS with different passivations and role of SiO2 on the nature of the band gap structure to enrich the understanding and eliminate misconceptions in this critical topic.

Tailoring the nature of band gap using passivation of silicon quatum nanostrucutres

249th National Meeting (2015)

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