The surface orientation of Naphthalene Diimides (NDI) on silicon surfaces is important to understanding the charge transfer that occurs along these semiconducting crystals. The NDI molecule is deposited on the silicon surface and then analyzed using IR Spectroscopy. The polarized ATR IR technique used looks at two different polarized angles that allow us to determine the orientation of the NDI with proficiency. We found that the molecule’s orientation and ordering is dependent on the thickness of the NDI layer deposited on the silicon surface. We also found that the molecule’s orientation changes when heat is applied to the surface. The change in the molecules orientation due to heat is dependent on the thickness of the NDI layer on the silicon crystal. The NDI on the silicon surface can be affected by film thickness and cooling rate. This leads us to believe that the ordering of the NDI is due to the silicon surface driving the orientation of the molecule. Further analysis of the NDI’s surface driven orientation is progressively being tested by using techniques that modify the silicon crystal’s surface.

Surface orientation analysis of naphthalene diimides using infrared spectroscopy

249th National Meeting (2015)

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