Germanene is the Ge analog of Graphene.  An increasing number of ab-initio calculations in the literature suggest that Germanene sheets should display unique properties, similar to those evidenced by Graphene.  Those reports indicate the deposits should have a  buckled structure, that is where half the atoms are about 0.7 nm higher than the other half.   MicroRaman, electrochemistry and in-situ scanning tunneling microscopy (EC-STM) have been used by this group to try and identify Germanene.  About 3 ML of Ge can be formed by direct electrodeposition on Au, but then it stops.  An ALD cycle has, however, been developed to grow thicker films of Ge.  The E-ALD cycle for Germanene involves first the deposition of an atomic layer of Te, followed by deposition of a Ge atomic layer. At this point, the Te atomic layer can be reduced from the surface, leaving only the Ge.  Repeated application of this cycle results in the layer by layer growth of Ge.  The resulting deposits appear to be stable in air for years.  Recent work investigating the nature of the electrodeposited Ge will be discussed.<br/>

Investigations into the electrochemical formation of germanene

249th National Meeting (2015)

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