As semiconductor device features have breached the sub 250 nm level, manufacturers have seen diminishing returns on interconnect delay, cost reduction and device yield, requiring better Low-K insulating materials[1]. Polyhedral oligomeric silsesquioxane (POSS) based materials possess low dielectric constants and a high degree of cross linking functionality necessary for a thermally stable material[2]. Two POSS resins have been synthesized and evaluated for application in integrated circuit packaging. Each has a distinct imaging mechanism and have demonstrated successful photo patterning based on methacrylate radical polymerization, and bis-azide nitrene addition. Initial thermomechanical and dielectric properties have been evaluated. In addition, new chemistry has been utilized to modify benzocyclobutene rings in order to significantly lower the thermosetting reaction temperature. [1] Volksen, Willi; Miller, Robert D.; Dubois, Geraud. Chem. Rev. 110, 56-110 [2] Hartmann-Thompson, Claire. Applications of Polyhedral Oligomeric Silsesquioxanes. Springer, 2011.

Directly patternable polyhedral silsesqioxane and benzocyclobutene dielectric materials for microelectronics packaging

249th National Meeting (2015)

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