Directed self-assembly (DSA) of block copolymers (BCPs) is a promising technology for advanced nanoscale patterning, but significant hurdles remain for commercial implementation in semiconductor patterning.  To address these challenges, we have focused our development on strongly segregated “high chi” block copolymers to enable high resolution patterning.  This presentation will provide an overview of our efforts to develop block copolymer based solutions for semiconductor patterning applications.  A particular emphasis will be placed on cylinder-morphology BCPs in graphoepitaxial DSA applications for line-space patterning.  In this approach, cylinder-forming block copolymers are applied onto a brush-coated surface with periodically spaced confining walls or “weirs”.  Several important materials parameters and their impact on DSA patterning will be discussed, including the impact of brush chemistry, block copolymer chi parameter and glass transition temperature, etch performance, and formulation.  In addition, a new strategy incorporating a self-segregating neutral top layer to control orientation in thin film BCP morphology will be presented.  These materials and techniques enable formation of nanostructures beyond the resolution of existing lithographic infrastructure and hold promise to enable continued scaling in integrated circuits.

Fun with block copolymers: New materials and processes using directed self assembly for nanoscale patterning

249th National Meeting (2015)

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