Group IV semiconducting nanoparticles (Si, Ge) are promising materials for energy applications such as solar cells and battery anodes. An array of synthetic methods exists to prepare colloidal Ge nanoparticles (NPs); however, examples demonstrating morphology/structural control are comparatively limited. Herein we present the electroless deposition of Ge onto sacrificial Ag NP templates to form hollow Ge NPs. The application of electroless deposition to form hollow semiconductor nanostructures is a novel method to control germanium’s morphology. The morphology, size distribution and chemical composition of the hollow Ge NPs were determined by transmission electron microscopy and energy dispersive spectroscopy. UV-vis spectrophotometry and Raman spectroscopy of the hollow Ge NPs will also be discussed.

Synthesis of hollow Ge nanoparticles via electroless deposition

250th National Meeting (2015)

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