Prior work involving the detection and emission of light from semiconductor nanostructures has involved single crystalline nanomaterials. But electrodeposited, polycrystalline (pc), cadmium selenide (CdSe) nanowires and nanogap device structures have also been fabricated anc characterized for applicaitons in both lighte detection and emission. The photodetectors and photon emitters we describe are symmetrical metal-semiconductor-metal (M-S-M) devices prepared either by the evaporation of two gold contacts onto linear arrays of pc-CdSe nanowires prepared using lithographically patterned nanowires electrodeposition (LPNE), or by the electrodeposition of pc-CdSe directly onto gold nanogaps. The properties of these devices for detecting light using photoconductivity, and for generating light by electroluminescence, are described.

Electrodeposited nanowire photonics

250th National Meeting (2015)

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