Silicon surfaces are promising interfaces because they are mechanically and chemically resilient, able to resist wear in aqueous and organic environments containing, and display good electrical properties. There are a number of methods to conduct a silicon surface thiolation, notably through the attachment of molecules with terminal -SH moieties, which suffers from long reaction times. In present work, we developed an alternative mean for silicon surface thiolation - introducing terminal thiol groups directly onto the silicon surface. We developed two-step, wet chemical process that relies on chlorinating and then surface thiolation, which requires less time for reaction. X-ray Photoelectron Spectroscopy (XPS), Atomic Force Microscopy (AFM) and contact angle measurement were employed for the surface characterization. The thiol group attached silicon substrate can be used for further surface functionalization (for example, UV-induced “thiol-ol” modification).

Method for attaching thiol groups on a silicon (111) substrate

251st National Meeting (2016)

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