Complexes of the type WN(NR2)3 have been previously synthesized as single source precursors for chemical vapor deposition of WNxCy, a candidate diffusion barrier material for Cu-metallized integrated circuits. Reactions of WN(NR2)3 with alkyl halides were examined in an effort to develop routes for selective halide-amide ligand exchange. Synthesis, product characterization and the reaction pathways will be discussed.

Reaction of WN(NR2)3 complexes with alkyl halides

251st National Meeting (2016)

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