Solution routes afford an economical and scalable means of making nanomaterials.  In particular, the solution synthesis of 0D nanoscale semiconductors has proven effective in producing size-, shape-, and composition-controlled particles.  Recently, solution routes to monodisperse 2D semiconductor structures have been developed; however, their incorporation into nanoscale electronic devices has been hampered by a lack of understanding of the necessary processing steps for semiconductors that are synthesized colloidally.  Specifically, the means to forming an ideal interface between the semiconductor surface and metal contacts are not well understood relative to 2D materials synthesized by mechanical exfoliation and gas phase deposition techniques.  Here we present an investigation on the interaction at the semiconductor-metal interface in devices based on colloidally-synthesized micron-scale tin chalcogenide compounds.  Several post-synthetic processing routes are examined, and their effect on the resulting device performance is reported.  Further, we interrogate the electronic and optoelectronic properties of these 2D semiconductors, as determined using spectroscopic and transport measurements, and relate these to the method by which they are processed.

Processing colloidally-synthesized 2D tin chalcogenide semiconductors for application in electronic devices

251st National Meeting (2016)

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