<br/>Moore’s Law is generally considered as a predictor for future microelectronic device density, but it also describes the incredible history of the improvement in performance and concomitant reduction in price of such devices. These improvements have been largely gained by continuously shrinking the devices, so Moore’s Law also predicts the future of device scaling. This scaling progression has had a profound influence on society the world over and chemistry has had a very significant role in this progression. In fact, advances in materials have been a key factor in every major advance. Photoresist materials have had a particularly interesting history. Several times, the scaling progression was stopped by imaging materials limitations and in every case to date; a new invention allowed device shrinking to continue. The industry is now at another of these sticking points. A new resist material design is required to enable the next generations of devices to be manufactured with cost efficiency. The “chemically amplified” resist design that is the basis for the imaging materials in current use has a fundamental limitation. New designs for high resolution imaging materials that circumvent this limitation are beginning to appear so there is hope for continuing Moore’s Law. This presentation will review some of the history of resist materials design; explain the limitations of the materials now in use and offer a view of the future.

Polymers for microelectronics: A view of the future

251st National Meeting (2016)

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