A progress report will be presented describing efforts to develop “high chi” silicon and tin containing block co-polymers together with the supporting materials and the associated process that enable their integration into a semiconductor device manufacturing process for patterning at 20nm half pitch and below. The inorganic elements are incorporated into the design to provide contrast in the etch development and image transfer processes. Silicon incorporation provides contrast in both oxidizing and reducing etch processes and the tin materials offer contrast in fluorine etch conditions of the sort used to pattern SiO<sub>2</sub>. The effort involves the synthesis, characterization, and purification of new monomer materials and block copolymers and the establishment the associated processes that enable the use of the new materials in directed self-assembly (DSA). The synthesis of the tin block copolymers with controlled molecular weight and polydispersity was particularly challenging. The most recent inorganic block copolymer materials provide oriented lamella with a ½ pitch of 50 angstroms.

Inorganic block copolymers for nanopatterning

251st National Meeting (2016)

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