The functionalization of silicon surfaces with thin layers of organic materials is an important area of study of semiconductor materials, with current and potential applications in microelectronics, catalysis, and bio-sensing. Triethylenediamine (also known as 1,4-diazabicyclo[2.2.2]octane, or DABCO) contains two tertiary amine nitrogen atoms, of which one could donate lone electron pair to the surface to form a dative bond while the other may remain accessible for further modification. This structure can further be modified through reactions with this unbound nitrogen. We used infrared spectroscopy (MIR-FTIR), X-ray photoelectron spectroscopy (XPS) and temperature programmed desorption (TPD) supported with density functional theory calculations (DFT) to study the reaction mechanism, including dative bonding possible dissociation and decomposition pathways on the Si(100)-2x1 surface.

Study of tertiary diamine dative bonding and dissociation on semiconductor surface: Adsorption of triethylenediamine on Si(100)-2×1

252nd National Meeting (2016)

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