Tungsten (VI) imido complexes of the type Cl4(CH3CN)W(NR) were previously synthesized to serve as single source precursors for the chemical vapor deposition (CVD) of WNxCy thin films, which are potential diffusion barriers for copper-metallized integrated circuits. We now report an investigation of the gas phase thermal decomposition of these precursors using in situ Raman spectroscopy under CVD conditions. These studies were performed using carrier gases of both nitrogen and a nitrogen/hydrogen mixture to observe precursor fragmentation. The implications of these mechanistic studies for the design of improved precursors for low-temperature CVD will be discussed.

In situ Raman investigation of chemical vapor deposition of WNxCy thin films from tungsten imido precursors

253rd National Meeting (2017)

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