The use of tin alkyls as precursors to epitaxial, single crystalline films of tin oxide and tin-doped perovskites in a hybrid molecular beam epitaxial system will be presented. With an rf-oxygen plasma as the oxygen source and tetraethyltin, three kinetic regimes corresponding to reaction-, flux- and desorption-limited growth were identified as a function of substrate temperature and tin precursor flux. Attempts to extend this process to the deposition of Sn-alloyed SrTiO3 yielded relatively little tin incorporation. Switching the tin source to hexamethylditin, Sn2Me6, allowed the growth of single crystal, epitaxial films with as much as 40 atomic % tin. To explore the extent of this unexpected effect, results from additional precursors including tetramethyltin will be presented. Computational studies aimed at understanding precursor chemistry in the high temperature region required to achieve single crystal films will be discussed.

Tin alkyls as a tin source in hybrid molecular beam epitaxy

253rd National Meeting (2017)

The official archive and repository for all ACS Meetings & Expositions abstracts and select posters or presentations.