The use of single source precursor complexes (SSPs) to prepare Cu(In/Ga)S2 (CIGS) and related semiconductor materials has been shown to enable excellent control of the stoichiometry, phase, and particle size of these materials. This work explores the effects of substituents in bimetallic SSPs on these complexes reactivity, particularly their decomposition to materials, and extends this work toward the preparation of SSPs for related targets. Cu2ZnSnS4 (CZTS) is appealing as a CIGS alternative due to the lower cost and toxicity of its components, but as a quaternary material presents an even more difficult case for stoichiometric control. The use of SSPs is one potential approach to this problem, but requires more complex SSPs or the combination of two precursor molecules. Progress toward new precursors in this area is described.

Ligand effects on the reactivity and synthesis of bimetallic molecular precursors for semiconductor materials

253rd National Meeting (2017)

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