Our laboratory seeks to develop the growth of metallic first row transition metal thin films using atomic layer deposition (ALD). The microelectronics industry is calling for the growth of metallic first row transition metal films by the ALD method for a variety of applications, including copper metallization, seed layers for copper metallization, copper/manganese alloys for self-forming copper diffusion barriers, and magnetic alloys. The ALD growth of noble metal, Cu, Mo, and W thin films has been explored extensively in the past ten years, due to the positive electrochemical potentials of these metal ions and relative ease of reduction to the metallic state. ALD routes to the other metallic first row transition metal films remain poorly developed, largely because of the negative electrochemical potentials of most of the ions and a corresponding lack of powerful reducing co-reagents that can convert precursors in positive oxidation states to the metals. Herein we will give an overview of our Co metal thin film development studies, including the curiosity-driven synthesis of the precursor bis(1,4-di-tert-butyl-1,3-diazabutadienyl)cobalt(II), use of bis(1,4-di-tert-butyl-1,3-diazabutadienyl)cobalt(II) for the chemical vapor deposition of Co metal films, serendipitous discovery of Co metal ALD using bis(1,4-di-tert-butyl-1,3-diazabutadienyl)cobalt(II) and formic acid, the selective growth of Co metal, and development of Co metal ALD using bis(1,4-di-tert-butyl-1,3-diazabutadienyl)cobalt(II) and amines.

Cobalt metal thin films: Precursor syntheses, atomic layer deposition, and selective growth

253rd National Meeting (2017)

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