The transformative science behind metal-based EUV photoresists illustrates the intimate link between defining market requirements for a photoresist to enable extreme ultraviolet lithography (EUV) in high-volume manufacturing and the development of transformative metal-based resist chemistries to address these lithographic, integration, and fab compatibility requisites. Relative to traditional organic chemically amplified resists (CAR), these new materials offer increased photon absorption, reduced stochastic length scales, and robust metal-oxide etch barriers after patterning. Together these properties permit improved image fidelity in a photon-limited patterning regime as well as simplified integration schemes at the 7-nm node and beyond.

Transformative science behind metal-based EUV photoresists

253rd National Meeting (2017)

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