The two-dimensional (2D) crystal SiTe is identified to be a 2D topological insulator (TI) with bulk band gap of 220 meV by means of first principles calculations. The synthesis of 2D SiTe has been reported earlier [Phys. Status Solid RRL 8, 302-306 (2014)] as part of a three-dimensional superlattice. The free-standing monolayer is thermally and dynamically stable and only weakly bound within the layered superlattice, offering the possibility of mechanical exfoliation. Our discovery of a topological signature with large band gap raises the expectation that the most apparent showstopper in experimental 2D TI research, the lack of stable materials exposing a quantum spin Hall (QSH)-effect at room temperature, can be overcome. This offers many laboratories to participate in investigating exciting new phenomena in condensed matter physics, such as new quasi-particles and dissipation-less spin transport.<br/>

Proposed two-dimensional topological insulator in SiTe

253rd National Meeting (2017)

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