I will address the opportunities which atomic layer deposition (ALD) offers to the field of energy devices: control in (ultra-)thin film growth, compatibility with 3D-structures, suppression of charge carrier recombination processes at complex interfaces, and low temperature processing. In the first case study, dedicated to organo-metal halide perovskite solar cells, I will describe the complex interface ITO/mesoscopic TiO2 scaffold/ methylammonium mixed halide perovskite and I will focus on the application of low temperature plasma-assisted ALD TiO2 (5-10 nm) on PET/ITO, as excellent blocking layer towards charge carrier recombination at the above-mentioned interface (Fig. 1). Furthermore, I will address the ALD deposition of ultra-thin (&lt;&lt; 1 nm) Al2O3 processed on the perovskite absorber, leading to an enhanced long-term device stability under humidity conditions ranging from 40% to 70%. In the second case study, I will present plasma-assisted ALD as tool for nitrogen-doped lithium phosphate (LiPON) as solid electrolyte for 3D all-solid state Li-ion batteries. The optimized deposition process delivers a Li-ion conductivity of 5×10-7 S/cm at room temperature (Fig. 2), with good conformality on high aspect ratio pillars. Furthermore, a solid state battery device has been fabricated comprising a Li4Ti5O12 cathode, a 70 nm thick ALD LiPON solid electrolyte and a metallic lithium anode, delivering a capacity of 0.3 Ah/cm3 and a stability of the LiPON layer versus Li, with no evidence of lithium dendrite formation.

Plasma-assisted atomic layer deposition for energy conversion and storage devices

253rd National Meeting (2017)

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