The characterization and engineering of defects in semiconductor materials are great vital aspects to effectively control and tune defect-induced functionalities rationally. However, when various defects co-exist in bulk or nanoscale materials, identifying different types of defects and distinguishing their own roles remain a substantial challenge. The electrochemiluminescence (ECL) behaviors of supertetrahedral chalcogenide nanoclusters (NCs) The multichannel ECL properties were observed, and the ECL emissions were originated from the intrinsic “vacancy point defect” and the anti-site defects in the nanoclusters. The ECL behaviors of supertetrahedral chalcogenide cluster can also be tuned the precise doping of metallic ions such as manganese, copper etc.. It was found that the radiation recombination path of ECL emission from CdInS nanocluster was suppressed by atomic doping of monomanganese ion. The facts indicated that ECL techniques can also be applied for the characterization of defects in chalcogenide nanoclusters. Moreover, the unique ECL properties of chalcogenide nanocluster can also be applied for the determination of reactive oxygen in aqueous solution and dopamine. The excellent ECL properties of supertetrahedral chalcogenide nanocluster show great promising in the applications of sensing and images.<br/>

Electrochemiluminescence behaviors featuring the point defects of supertetrahedral chalcogenide nanocluster

253rd National Meeting (2017)

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