Heterostructured semiconductor nanoparticles synthesized with increasing complexity impart advanced functionality to the resulting quantum dots (QDs) for applications in sensing, solid state lighting, and photovoltaics. Adding semiconductor shells to InP core materials is an effective way to protect the easily oxidized core as well as engineer the bandgap structure of the particle. Under certain conditions where partial oxidation of the core is observed, however, the defect layer acts as a hole tunneling barrier, creating a particle that emits both as a core/shell quantum dot and as a quantum well or Inverted-Type I QD. The relative intensity of the two emission peaks can be adjusted through control of the oxidation of the core and emission colors dictated by the shell composition and thickness. The dual functionality of these particles for combined imaging and photochemistry is demonstrated.

Synthesizing dual-emitting quantum dots on indium phosphide cores

253rd National Meeting (2017)

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