A scalable fabrication of graphene and functional graphene with low cost is required emergently to promote applications of graphene-based materials and devices. Hitherto, the growth of epitaxial graphene (EG) on insulating silicon carbide (SiC) surfaces has been developed to produce high-quality at a large-scale. However, this method is extremely high requirements for almost perfectly ordered crystal SiC and harsh process conditions. Here, for the first time we report that the amorphous carbides including a-Si1−xCx and a-Ti1−xCx can be directly transformed into graphene by complete chlorination under low temperature as low as 200°C and the ambient pressure. The number of graphene layers can be well controlled by setting up the rational chlorination temperature. On the base of above studies, we further find a universal transformation of abundant 2D carbides (MxCy) to few-layered graphene and M-self-doped graphene (MG) by the complete and incomplete chlorination, respectively. Simultaneously, the M amount of MG (e.g., Cr3C2, Mo2C, NbC and VC) can be tuned by controlling the experimental parameters. Therefore, these novel methods are readily scalable to produce graphene and MG materials on industrial levels, opening a door to apply to the large-scale production of graphene based materials at low costs.

Transform carbides (MxCy) into graphene and M-self-doped graphene by a general chlorination strategy

254th National Meeting (2017)

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