Aerosol assisted chemical vapor deposition (AACVD) is a technique which allows the use of nonvolatile compounds for the deposition of metallic and semiconductor thin films. The sulfur-rich complex WS(S2)(S2CNEt2)2 has been used in AACVD as a single source precursor for the deposition of WS2. The thermal properties of WS(S2)(S2CNEt2)2 have been investigated using thermogravimetric analysis and gaseous byproducts were determined through mass spectrometry. WS2 was successfully deposited at temperatures between 350-500 °C. Synthesis, thermal decomposition, and deposition from WS(S2)(S2CNEt2)2 will be discussed.

Aerosol assisted chemical vapor deposition of WS2 from a single source precursor

254th National Meeting (2017)

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