Metal organic frameworks (MOFs), which have the advantages of microporosity (pores ≤ 2nm), 3-D order, and connectivity, are being investigated as templates for high pressure confined chemical vapor deposition (HPcCVD).  This technique uses high pressures and a confined reactor to allow materials to be fully infiltrated within the small trenches and pores of nanoscale templates.  Using this process, a material can be obtained that is periodic on a scale of 1-2 nm, with 3-D order and connectivity derived from the original template.  Semiconductor materials infiltrated into MOFs should exhibit novel optical and thermoelectric properties due to the ordered, small nanometer (≤ 2 nm) features of the resulting semiconductor lattice.  To date, obtaining such a material on this small scale is not possible using conventional techniques.  Despite the advantages offered by MOFs, one potential drawback is that the framework must remain stable during the deposition procedure.  Given that the deposition technique includes high pressure and temperature, much of the current work has focused on identifying the ideal MOFs to use for this process.  The stability of various MOFs under the deposition conditions has been investigated, and characterized using X-ray diffraction.

Stability of metal-organic frameworks for high pressure confined chemical vapor deposition

254th National Meeting (2017)

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