Block copolymers (BCPs) have recently become an attractive materials for the directed self-assembly (DSA) expected to be used next-generation lithography as a viable alternative technique for the nanofabrication of semiconductors. To facilitate applying BCPs to DSA, some requirements are demanded to achieve simultaneously such as a high resolution, perpendicular orientation, enough etch selectivity between blocks, and a low cost. We have been especially interested in silicon (Si)-containing BCPs and designed a novel modified polystyrene and polysiloxane-based BCPs targeted for not only forming perpendicularly oriented lamellar structures in thin films but also sub-10 nm high resolution. The hydroxyl groups introduced in the polysiloxane side chain make it possible to lead the perpendicular orientation by modifying an affinity for air interface to give a good balance with the polystyrene surface free energy. This novel BCP also could achieve orientation control in only one minute at 130 °C in an air atmosphere. Oxygen-reactive ion etching (O2-RIE) for the thin films results in the achievement of a line width of 8.5 nm. We also could obtain very interesting morphologies in nanostructures that are expected to be exploited as nanofilter. Moreover, a novel class of Si-rich BCPs with hyperbranched polysiloxane side chains were synthesized aiming at high etching contrast between the polystyrene and polysiloxane blocks. The resistance to O2-RIE was quantified for the linear and hyperbranched polysiloxanes, revealing that the hyperbranched polysiloxanes exhibited increased O2-RIE resistances.

Single-digit nanometer polysiloxane-based block copolymers: Design, synthesis, and perpendicular orientation control

255th National Meeting (2018)

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