We have carried out a number of simulations using typical Basic Stern model (BSM) parameters. While the Stern Layer has been introduced in the interfacial models to avoid the physically problematic accumulation of counter-ions at the head end of the diffuse layer in the bare diffuse layer models, we show that the for a number of parameter sets, the problem continues to persist in approaches like the BSM. The extent of counter-ion accumulation at the head-end of the diffuse layer depends on the factors that affect the diffuse layer potential. Within multi-layer surface complexation models, the main parameters in this respect are the counter-ion binding constants and the capacitance values. Low counter-ion association and high capacitance values may generate purely diffuse layer situation as occurs for some parameterisations of silica charging. We show that even for other model parameter sets, the diffuse layer potential remains sufficiently high to attract more counter-ions than it should. Overall, this would be a good reason to step back towards a classical triple layer approach.  <br/>

Surface complexation modeling – From BSM back to TLM?

255th National Meeting (2018)

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