Since its isolation in 2014, few-layer black phosphorus (BP) has been under intensive research efforts, due to its many interesting material properties such as the combination of high mobility and sizable band gap, in-plane anisotropy and band structure modulation by electric field or strain. Many of the predicted properties can only be revealed in high mobility samples, in which the intrinsic phenomena are not obscured by impurities, and which are essential for further applications in any quantum device structures. Here I will present our recent works on ultra-high quality few-layer BP transistors, including the creation of double quantum wells, Landau level gaps in samples with demonstrated strong in-plane anisotropy, high quality integer quantum Hall effect and the first observation of fractional quantum Hall effect in BP. These results pave the way to the study of even more fragile fractional quantum Hall states or more complicated quantum structures in BP.

Integer and fractional quantum Hall effect in various few-layer black phosphorus transistors

256th National Meeting (2018)

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